The diffusion doping of Cu crystals with 0.1 at.% In at high annealing temperatures for surface segregation measurements
Identifieur interne : 000364 ( Main/Repository ); précédent : 000363; suivant : 000365The diffusion doping of Cu crystals with 0.1 at.% In at high annealing temperatures for surface segregation measurements
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Abstract
In order to study the segregation of In in polycrystalline Cu crystals the Cu was doped with a low concentration of In. Due to the very low melting point of In the electron evaporated In layer was covered with a Cu layer to prevent the melting of the In layer during the high temperature annealing process in which the Cu was diffusion doped with In. The In/Cu thin layers were characterized with X-ray diffraction (XRD) and Auger electron spectroscopy. The XRD data and the Auger depth profiles illustrated a CuxIny phase formation and segregation of In to the surface of the In/Cu layers during the heat treatments. The formation of a CuxIny phases (with a higher melting points than pure In) in the In/Cu thin layers corresponds to a change in the melting point of the system from that of pure In (156.6 °C) to that of the CuxIny phase with a much higher melting point. It was found that the use of phase transition in the In/Cu thin layers is a promising method to dope Cu crystals with In (≃0.1 at.%) at higher annealing temperatures without melting the In or CuxIny phases. The method was further verified by doping the Cu crystals with a low concentration of In (≃0.1 at.%). It was observed that the In segregated to the surface when the In doped Cu crystal was annealed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The diffusion doping of Cu crystals with 0.1 at.% In at high annealing temperatures for surface segregation measurements</title><author><name sortKey="Madito, M J" uniqKey="Madito M">M. J. Madito</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of the Free State, P.O. Box 339</s1><s2>Bloemfontein 9300</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Bloemfontein 9300</wicri:noRegion></affiliation></author><author><name sortKey="Swart, H C" uniqKey="Swart H">H. C. Swart</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of the Free State, P.O. Box 339</s1><s2>Bloemfontein 9300</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Bloemfontein 9300</wicri:noRegion></affiliation></author><author><name sortKey="Terblans, J J" uniqKey="Terblans J">J. J. Terblans</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of the Free State, P.O. Box 339</s1><s2>Bloemfontein 9300</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Bloemfontein 9300</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0284997</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0284997 INIST</idno><idno type="RBID">Pascal:13-0284997</idno><idno type="wicri:Area/Main/Corpus">000869</idno><idno type="wicri:Area/Main/Repository">000364</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>AES</term><term>Annealing temperature</term><term>Copper</term><term>Depth profiles</term><term>Diffusion</term><term>Doping</term><term>Heat treatments</term><term>Indium</term><term>Melting points</term><term>Phase transitions</term><term>Polycrystals</term><term>Surface segregation</term><term>Thermal annealing</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diffusion(transport)</term><term>Dopage</term><term>Température recuit</term><term>Recuit thermique</term><term>Ségrégation surface</term><term>Point fusion</term><term>Diffraction RX</term><term>Spectrométrie Auger</term><term>Profil profondeur</term><term>Traitement thermique</term><term>Transition phase</term><term>Indium</term><term>Couche mince</term><term>Cuivre</term><term>Polycristal</term><term>In</term><term>6835F</term><term>6855L</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In order to study the segregation of In in polycrystalline Cu crystals the Cu was doped with a low concentration of In. Due to the very low melting point of In the electron evaporated In layer was covered with a Cu layer to prevent the melting of the In layer during the high temperature annealing process in which the Cu was diffusion doped with In. The In/Cu thin layers were characterized with X-ray diffraction (XRD) and Auger electron spectroscopy. The XRD data and the Auger depth profiles illustrated a Cu<sub>x</sub>In<sub>y</sub> phase formation and segregation of In to the surface of the In/Cu layers during the heat treatments. The formation of a Cu<sub>x</sub>In<sub>y</sub> phases (with a higher melting points than pure In) in the In/Cu thin layers corresponds to a change in the melting point of the system from that of pure In (156.6 °C) to that of the Cu<sub>x</sub>In<sub>y</sub> phase with a much higher melting point. It was found that the use of phase transition in the In/Cu thin layers is a promising method to dope Cu crystals with In (≃0.1 at.%) at higher annealing temperatures without melting the In or Cu<sub>x</sub>In<sub>y</sub> phases. The method was further verified by doping the Cu crystals with a low concentration of In (≃0.1 at.%). It was observed that the In segregated to the surface when the In doped Cu crystal was annealed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>542</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>The diffusion doping of Cu crystals with 0.1 at.% In at high annealing temperatures for surface segregation measurements</s1></fA08><fA11 i1="01" i2="1"><s1>MADITO (M. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>SWART (H. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>TERBLANS (J. J.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of the Free State, P.O. Box 339</s1><s2>Bloemfontein 9300</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>186-191</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000501509380310</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0284997</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In order to study the segregation of In in polycrystalline Cu crystals the Cu was doped with a low concentration of In. Due to the very low melting point of In the electron evaporated In layer was covered with a Cu layer to prevent the melting of the In layer during the high temperature annealing process in which the Cu was diffusion doped with In. The In/Cu thin layers were characterized with X-ray diffraction (XRD) and Auger electron spectroscopy. The XRD data and the Auger depth profiles illustrated a Cu<sub>x</sub>In<sub>y</sub> phase formation and segregation of In to the surface of the In/Cu layers during the heat treatments. The formation of a Cu<sub>x</sub>In<sub>y</sub> phases (with a higher melting points than pure In) in the In/Cu thin layers corresponds to a change in the melting point of the system from that of pure In (156.6 °C) to that of the Cu<sub>x</sub>In<sub>y</sub> phase with a much higher melting point. It was found that the use of phase transition in the In/Cu thin layers is a promising method to dope Cu crystals with In (≃0.1 at.%) at higher annealing temperatures without melting the In or Cu<sub>x</sub>In<sub>y</sub> phases. The method was further verified by doping the Cu crystals with a low concentration of In (≃0.1 at.%). It was observed that the In segregated to the surface when the In doped Cu crystal was annealed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H35F</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Diffusion(transport)</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Diffusion</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dopage</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Doping</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Doping</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Température recuit</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Annealing temperature</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Temperatura recocido</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Ségrégation surface</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Surface segregation</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Point fusion</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Melting points</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectrométrie Auger</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>AES</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Depth profiles</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heat treatments</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Transition phase</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Phase transitions</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Transición fase</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Couche mince</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Thin films</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Polycristal</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Polycrystals</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>6835F</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>6855L</s0><s4>INC</s4><s5>72</s5></fC03><fN21><s1>273</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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